indium tin patents

indium tin patents

Patents Assigned to Indium Corporation of America -

2006-10-18  Abstract: A technique for increasing the compliance of tin-indium solders is disclosed. In one particular exemplary embodiment, the technique may be realized as a lead free solder alloy comprising from about 58.0% to about 99.998% by weight tin, from about 0.001% to about 40.0% by weight indium, and from about 0.001% to about 2.0% by weight at least one rare earth element.

Read More
US8049862B2 - Indium tin oxide (ITO ... - Google Patents

A layer of material, such as crystalline indium tin oxide (ITO), is formed on top of a substrate by heating the material to a high temperature, while a temperature increase of the substrate is limited such that the temperature of the substrate does not exceed a predetermined temperature. For example, a layer including amorphous ITO can be deposited on top of the substrate, and the amorphous ...

Read More
US Patent for Dry-etching of indium and tin oxides Patent ...

1997-6-25  An etch method includes providing a material layer consisting essentially of a group member selected from the group consisting of an indium oxide (InO), a tin oxide (SnO), a mixture of indium and tin oxides, a compound of indium and of tin and of oxygen having the general formulation In.sub.x Sn.sub.y O.sub.z where z is substantially greater than zero but less than 100% and where the sum x+y ...

Read More
Patents Assigned to Indium Corporation - Justia Patents

2019-12-19  The solder alloy includes 5.0-20.0 wt. % of indium (In), 1.0-5.0 wt. % of silver (Ag), 0.25-2.0 wt. % of copper (Cu), 0.1-0.5 wt. % of zinc (Zn), and a remainder of tin (Sn). In implementations, a sulfur compound may be included in a concentration of 100 ppm to 500 ppm in the alloy to prevent oxidation of zinc and indium on the surface of the ...

Read More
US2649368A - Indium-bismuth-tin alloy - Google Patents

US2649368A US189045A US18904550A US2649368A US 2649368 A US2649368 A US 2649368A US 189045 A US189045 A US 189045A US 18904550 A US18904550 A US 18904550A US 2649368 A US2649368 A US 2649368A Authority US United States Prior art keywords bismuth indium tin alloy alloys cadmium Prior art date 1950-10-07 Legal status (The legal status is an assumption and is not a legal

Read More
Transparent conductive stratiform coating of indium tin

2001-5-9  A transparent electrically conductive device which includes an indium tin oxide film is improved by providing an indium tin oxide film which contains a graded stack of individual indium tin oxide layers wherein the atomic percent of tin in the layers can be individually selected. Each indium tin oxide layer of the film contains 1-99 atomic percent tin.

Read More
Atomic layer epitaxy of hematite on indium tin oxide for ...

2016-7-12  Abstract. A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide.

Read More
US Patent for Process for preparation of indium oxide-tin ...

1993-12-7  An indium oxide-tin oxide powder for ITO display devices etc. with only slight variance in properties such as average particle diameter and apparent density is prepared stably with good controllability and at low cost: (1) by electrolyzing indium as an anode, calcining or roasting the indium hydroxide obtained and combining the resulting indium oxide powder with a tin oxide powder; (2) by ...

Read More
Indium-tin oxide (ITO) layer and method for producing the ...

2001-5-4  A process for the deposition of transparent and conductive indium-tin oxide (ITO) films with a particularly low resistance of preferably less than 200 μΩcm and a small surface roughness of preferably less than 1 nm on a substrate, wherein combined HF/DC sputtering of an indium-tin oxide (ITO) target is employed and wherein the process gas is supplemented by an argon/hydrogen mixture as ...

Read More
US3979240A - Method of etching indium tin oxide -

A method of etching a desired pattern in a layer of indium tin oxide formed on a substrate of a semiconductor or an insulating material in which the desired pattern is formed of a hardened photoresist on the layer of indium tin oxide and thereafter the substrate and the indium tin oxide layer with the hardened resist thereon is immersed in a solution of concentrated hydrobromic acid for a time ...

Read More
US Patent for Dry-etching of indium and tin oxides Patent ...

1997-6-25  An etch method includes providing a material layer consisting essentially of a group member selected from the group consisting of an indium oxide (InO), a tin oxide (SnO), a mixture of indium and tin oxides, a compound of indium and of tin and of oxygen having the general formulation In.sub.x Sn.sub.y O.sub.z where z is substantially greater than zero but less than 100% and where the sum x+y ...

Read More
US Patent Application for Indium Tin Oxide Thin Films

2017-4-20  An indium tin oxide film containing by weight about 90% In2O3 and about 10% SnO2 is prepared using a low-energy deposition sputter process on a substrate. The indium tin oxide film thus obtained has a carrier concentration on the order of 1020/cm3 and a carrier mobility greater than 30 cm2/Vs. The low carrier concentration results in an increased transmission in the near infra-red region ...

Read More
US Patent for Process for preparation of indium oxide-tin ...

1993-12-7  An indium oxide-tin oxide powder for ITO display devices etc. with only slight variance in properties such as average particle diameter and apparent density is prepared stably with good controllability and at low cost: (1) by electrolyzing indium as an anode, calcining or roasting the indium hydroxide obtained and combining the resulting indium oxide powder with a tin oxide powder; (2) by ...

Read More
Indium-tin oxide (ITO) layer and method for producing the ...

2001-5-4  A process for the deposition of transparent and conductive indium-tin oxide (ITO) films with a particularly low resistance of preferably less than 200 μΩcm and a small surface roughness of preferably less than 1 nm on a substrate, wherein combined HF/DC sputtering of an indium-tin oxide (ITO) target is employed and wherein the process gas is supplemented by an argon/hydrogen mixture as ...

Read More
Method for manufacturing transparent conductive indium

A method for applying a transparent, conductive indium-tin oxide coating on a substrate of amorphous, hydrogen-containing silicon wherein an unheated substrate of amorphous hydrogen-containing silicon is treated with sources of indium and tin in a first stage while maintaining a low partial pressure of oxygen until a partial coating is built-up, then reducing the oxygen partial pressure in the ...

Read More
Patents Assigned to Indium Corporation - Justia Patents

2007-5-8  Patent number: 5455004. Abstract: A lead-free alloy suitable for soldering comprising from about 82% to about 90% tin, from about 4.5% to about 6% zinc, from about 3.5% to about 6% indium and from about 1% to about 5% bismuth. The melting temperature of the alloy is preferably below 190.degree.

Read More
Patent application for innovative film - possible Indium ...

2011-11-10  On Nov. 5, Iroh filed a provisional patent application with the U.S. Patent Office for a polymer-based film with remarkable properties. The film is highly transparent and electrically conductive.

Read More
Patent Pick: Lauder Rides the Infrared Wave with Indium ...

2018-9-28  ITO is reportedly a ternary composition of indium, tin and oxygen in varying proportions, typically as 74% indium, 18% oxygen and 8% tin by weight. According to the inventors, one advantage of ITO coated substrates is that they are transparent at visible wavelengths but opaque in the IR and UV ranges. Patent application accessed on Sept. 28, 2018.

Read More
Fusible alloy containing bismuth, indium, lead, tin and ...

One such alloy is Indalloy 117 manufactured by the Indium Corporation of America. Indalloy 117 comprises 44.7% by weight bismuth, 22.6% by weight lead, 8.3% by weight tin, 19.1% by weight indium and 5.3% by weight cadmium. ASTM Alloy 117 has a low enough melting temperature to allow it to be used to block plastic lenses.

Read More
(12) United States Patent Patent No.: US 8,163,094 B1

2020-8-6  LAdesida et al., Etching of indium tin oxide in methane/hydrogen plasmas, J. Vac. Sci., Technology B, vol. 9, No. 6 (1991). Saia et al., Selective reactive ion etching of indium-tin oxide in a hydrocarbon gas mixture, Jrnl of the Electrochemical Society, vol. 138:, No. 2, pp. 493 (1991). * cited by examiner Primary Examiner Michael Komakov

Read More
Surface-Modified Indium-Tin Oxides - DEGUSSA AG

1. Surface-modified indium-tin oxides, characterised by. 2. Process for producing the surface-modified indium-tin oxides according to claim 1, characterised in that the oxides are sprayed with the surface-modifying agent whilst being mixed and the mixture is then heat treated at a temperature of 50 to 400° C. for a period of 1 to 6 hours.

Read More
Palladium-based dental alloy containing indium and tin ...

Palladium-based dental alloy containing indium and tin (PAT - US4319877) ' ' BOYAJIAN BENJAMIN K Patent: United STATES Patent - United States. Application: US19800180143 on 1980-08-21. Publication: 1982-03-16. Abstract. A non-discoloring palladium-based alloy, free of silver or gold, suitable for fusion to dental porcelain compositions consists ...

Read More
Atomic layer epitaxy of hematite on indium tin oxide for ...

2016-7-12  Abstract. A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide.

Read More
Patent application for innovative film - possible Indium ...

2011-11-10  On Nov. 5, Iroh filed a provisional patent application with the U.S. Patent Office for a polymer-based film with remarkable properties. The film is highly transparent and electrically conductive.

Read More
Patent Pick: Lauder Rides the Infrared Wave with Indium ...

2018-9-28  ITO is reportedly a ternary composition of indium, tin and oxygen in varying proportions, typically as 74% indium, 18% oxygen and 8% tin by weight. According to the inventors, one advantage of ITO coated substrates is that they are transparent at visible wavelengths but opaque in the IR and UV ranges. Patent application accessed on Sept. 28, 2018.

Read More
C22B 58 - Obtaining gallium or indium - Patents Sitemap

2015-3-11  Patents for C22B 58 - Obtaining gallium or indium (821) 12/2013: 12/25/2013: CN103468977A Method for selectively leaching germanium and gallium from complex smelting slag with germanium and ...

Read More
(12) United States Patent Patent No.: US 8,163,094 B1

2020-8-6  .rJC 4/ 2 only 1400 12WI tow 80 4W mu uuuu ui iiui imi uui um lull uui iiui uui mui mi uii mi (12) United States Patent (1o) Patent No.: US 8,163,094 B1 Greer et al. (45) Date of Patent: Apr. 24, 2012 (54) METHOD TO IMPROVE INDIUM BUMP BONDING VIA INDIUM OXIDE REMOVAL

Read More
Chemical Information Profile for Indium Tin Oxide

2021-10-17  indium oxide and tin oxide powders are blended together then compacted by hot or cold isostatic pressing or by sintering to make ITO sputtering targets (compressed blocks of ITO powder). ITO may be formed directly during a coating process, e.g., reactive sputtering from indium-tin alloy targets in the presence of oxygen.

Read More
Synthesis and application of non-agglomerated ITO ...

2014-7-25  Indium–tin stearate precursor was successfully synthesized by a direct reaction between metals (indium and tin) and molten stearic acid under a nitrogen atmosphere at 260 °C for 3 h for the first time. Nearly, monodisperse ~7 nm indium tin oxide (ITO) nanocrystals without any agglomeration were efficiently synthesized by pyrolysis of the as-synthesized precursors without using additional ...

Read More
Indium Corporation Global Solder and Electronics

Indium Corporation is a premier materials refiner, smelter, manufacturer, and supplier to the global electronics, semiconductor, thin-film, and thermal management markets. Products include solders and fluxes; brazes; thermal interface materials; sputtering targets; indium, gallium, germanium, and tin metals and inorganic compounds; and NanoFoil®.

Read More